Si840x
1. Electrical Specifications
Table 1. Absolute Maximum Ratings 1
Parameter
Storage Temperature 2
Ambient Temperature Under Bias
Supply Voltage (Revision A) 3
Symbol
T STG
T A
V DD
Min
–65
–40
–0.5
Typ
Max
150
125
5.75
Unit
°C
°C
V
Supply Voltage (Revision
B) 3
V DD
–0.5
6.0
V
Input Voltage
Output Voltage
Output Current Drive (non-I 2 C channels)
V I
V O
I O
–0.5
–0.5
V DD + 0.5
V DD + 0.5
±10
V
V
mA
Side A output current drive
(I 2 C
channels)
I O
±15
mA
Side B output current drive (I 2 C channels)
Lead Solder Temperature (10 s)
Maximum Isolation Voltage (1 s)
I O
±75
260
3600
mA
°C
V RMS
Notes:
1. Permanent device damage may occur if the absolute maximum ratings are exceeded. Functional operation should be
restricted to conditions as specified in the operational sections of this data sheet.
2. VDE certifies storage temperature from –40 to 150 °C.
3. See "7.Ordering Guide" on page 25 for more information.
Table 2. Si840x Power Characteristics*
3.0 V < VDD < 5.5 V. TA = –40 to +125 °C. Typical specs at 25 °C (See Figures 2 and 16 for test diagrams.)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Si8400/01/02 Supply Current
AVDD current
BVDD current
AVDD current
BVDD current
AVDD current
BVDD current
Idda
Iddb
Idda
Iddb
Idda
Iddb
All channels = 0 dc
All channels = 1 dc
All channels = 1.7 MHz
4.2
3.9
2.3
1.9
3.2
2.9
6.3
5.9
3.5
2.9
4.8
4.4
mA
mA
mA
mA
mA
mA
Si8405 Supply Current
AVDD current
BVDD current
AVDD current
BVDD current
AVDD current
BVDD current
Idda
Iddb
Idda
Iddb
Idda
Iddb
All non-I 2 C channels = 0
All I 2 C channels = 1
All non-I 2 C channels = 1
All I 2 C channels = 0
All non-I 2 C channels = 5 MHz
All I 2 C channels = 1.7 MHz
3.2
2.9
6.2
6.0
4.7
4.5
4.8
4.4
9.3
9.0
7.1
6.8
mA
mA
mA
mA
mA
mA
*Note: All voltages are relative to respective ground.
4
Rev. 1.6
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